Title :
0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology
Author :
Chou, Y.C. ; Leung, D. ; Lai, R. ; Grundbacher, R. ; Barsky, M. ; Kan, Q. ; Tsai, R. ; Eng, D. ; Wojtowicz, M. ; Block, T. ; Liu, P.H. ; Olson, S. ; Oki, A. ; Streit, D.C.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H/sub 2/ poisoning. The three-temperature lifetest (T/sub 1/ = 215/spl deg/C, T/sub 2/ = 230/spl deg/C and T/sub 3/ = 250/spl deg/C) of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs in a N/sub 2/ ambient demonstrates an activation energy (Ea) as high as 1.9 eV, achieving a projected median-time-to-failure (MTF) /spl ap/ 1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 /spl mu/m InP HEMTs exhibit less sensitivity to H/sub 2/ exposure than 0.1 /spl mu/m GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 /spl mu/m InGaAs/InAlAs/InP MMICs technology for flight applications.
Keywords :
III-V semiconductors; aerospace instrumentation; aluminium compounds; electrostatic discharge; failure analysis; field effect MMIC; gallium arsenide; gamma-ray effects; high electron mobility transistors; indium compounds; integrated circuit reliability; integrated circuit testing; life testing; 0.1 micron; 1.9 eV; 125 degC; 215 to 250 degC; HEMT MMICs; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP; RF survivability; activation energy; destructive voltage; electrostatic discharge; flight qualified technology; gamma radiation; junction temperature; projected median-time-to-failure; three-temperature lifetest; via-hole baking; Degradation; Electrostatic discharge; Gamma rays; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; Radio frequency; Temperature sensors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049033
