Title :
Reliability of commercial InP HBTs under high current density lifetests
Author :
Feng, K.T. ; Nguyen, N.X. ; Chanh Nguyen
Author_Institution :
Global Commun. Semicond. (GCS) Inc., Torrance, CA, USA
Abstract :
GCS has successfully developed a high performance and manufacturable 4-inch InP HBT technology for commercial pure-play foundry services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS´s InP HBTs show potentially excellent reliability under lifetests at current densities of 100kA/cm/sup 2/ or higher. The V/sub be/´s at both low and high current densities have little shift up to 4000hrs under 150kA/cm/sup 2/, which indicates that the C-doped InP HBT is potentially much more stable compared to Be-doped InP HBT for high current density operation. The emitter resistance also shows very stable behavior over the stress time under high current density stresses.
Keywords :
III-V semiconductors; current density; heterojunction bipolar transistors; indium compounds; life testing; semiconductor device reliability; 4 inch; 4000 hr; GCS; HBTs; InP; current density; emitter resistance; lifetests; process technology; pure-play foundry services; reliability; stress time; Current density; Dielectric thin films; Heterojunction bipolar transistors; Indium phosphide; Life testing; Lithography; Optical fiber communication; Process design; Stress; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049036
