Title :
A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
Author :
Meliani, C. ; Rondeau, G. ; Post, G. ; Decobert, J. ; Mouzannar, W. ; Dutisseuil, E. ; Lefevre, R.
Author_Institution :
Alcatel R&I, OPTO+, Marcoussis, France
Abstract :
The design, fabrication and characteristics of a coplanar distributed ultra broadband amplifier are presented. The circuit is fabricated using a composite channel InP CC-HEMT high breakdown voltage technology developed in Alcatel OPTO+. It exhibits an average gain of 13 dB over a 92 GHz -3dB cut-off frequency that corresponds to a state of the art gain-bandwidth product of 410 GHz for baseband amplifier ICs. It still presents 8 dB gain at 110 GHz. Such an amplifier is a good candidate for 40 and 80 Gbit/s optoelectronic driver modules applications. We discuss the use of coplanar waveguide lines and low impedance bias microstrip transmission lines in such a design. We also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain-bandwidth product for 80 Gbit/s ETDM communications.
Keywords :
HEMT integrated circuits; III-V semiconductors; coplanar waveguides; digital communication; distributed amplifiers; driver circuits; field effect MIMIC; indium compounds; integrated circuit design; optical communication equipment; wideband amplifiers; 40 Gbit/s; 410 GHz; 8 to 13 dB; 80 Gbit/s; 92 GHz; Alcatel OPTO+; CPW lines; InP CC-HEMT high breakdown voltage technology; InP HEMT distributed amplifier; InP composite channel HEMT; baseband amplifier ICs; coplanar ultra broadband amplifier; coplanar waveguide lines; fabrication; fibre communication systems; high bit rate communication systems; high gain-bandwidth product amplifier; low impedance bias microstrip transmission lines; optoelectronic driver modules applications; Baseband; Broadband amplifiers; Coplanar waveguides; Cutoff frequency; Distributed amplifiers; Driver circuits; Fabrication; Gain; HEMTs; Indium phosphide;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049039
