Electrothermal simulation of HBT by TLM method with quasi two dimensional model

Author

Jinjin Shen ; Kangsheng Chen ; Zhikun Xie

Author_Institution

Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1481

Abstract

Presents an improved quasi two dimensional model incorporating depletion-layer approximation to simulate electrothermal properties of HBT. In the model the temperature profile and minority carrier distributions are numerically simulated by transmission line matrix (TLM) method. The results show that this model can conveniently simulate the electrothermal effects under the efficient reduction both in CPU time and memory space.

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; minority carriers; semiconductor device models; transmission line matrix methods; HBT; TLM method; depletion-layer approximation; electrothermal simulation; microwave bipolar transistors; minority carrier distributions; quasi two dimensional model; temperature profile; Charge carrier processes; Data mining; Electrothermal effects; Heat transfer; Heterojunction bipolar transistors; Poisson equations; Temperature distribution; Thermal conductivity; Thyristors; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596610

Filename

596610