Title :
A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs
Author :
Orzati, A. ; Robin, F. ; Meier, H.P. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion gain of -7.3 dBm for 2 dBm LO power, an LO suppression of 20 dB and an upper-sideband rejection of more than 17 dB. This performance is excellent if compared to the best reported results for InP HEMT resistive mixers.
Keywords :
HEMT integrated circuits; MMIC mixers; MMIC oscillators; circuit simulation; coplanar waveguides; integrated circuit design; integrated circuit measurement; integrated circuit modelling; optical fibre communication; 0.2 micron; 1 to 2 GHz; 14 to 15 GHz; 16 GHz; InP; InP HEMT; LO power; LO suppression; MMIC image-rejection resistive mixers; coplanar-waveguide technology; fiber-radio communication systems; frequency converters; frequency shift; local oscillators; mm-wave fiber-optic communication systems; peak conversion gain; up-conversion; upper-sideband rejection; Circuit synthesis; Electromagnetic fields; HEMTs; Indium phosphide; Laboratories; MMICs; MODFETs; Radio frequency; Threshold voltage; Universal Serial Bus;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049042
