Title :
Gallium nitride: use in high power control applications
Author :
Caverly, R.H. ; Drozdovski, N.V. ; Joye, C. ; Quinn, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
Abstract :
The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; electric resistance; equivalent circuits; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN FET; FET control model; equivalent circuit models; gate bias circuit effects; high breakdown voltage devices; high power microwave/RF control applications; high power operation; off-state capacitance; on-state resistance; switch cutoff frequency; Capacitance; Circuits; Cutoff frequency; Gallium nitride; III-V semiconductor materials; Microwave FETs; Power control; Predictive models; Radio frequency; Switches;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049045
