Product applications and technology directions with SiGe BiCMOS

Author

Dunn, J. ; Freeman, G. ; Harame, D. ; Joseph, A. ; Coolbaugh, D. ; Groves, R. ; Stein, K. ; Volant, R. ; Subbanna, S. ; Marangos, V.S. ; St Onge, S. ; Eshun, E. ; Cooper, P. ; Johnson, J. ; Rieh, J. ; Ramachandran, V. ; Ahlgren, D. ; Wang, D. ; Wang, X.

Author_Institution

IBM Corp., Essex Junction, VT, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

135

Lastpage

138

Abstract

In this paper we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. Examples include high speed device design, power amplifiers, integrated VCOs and very high level integration.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; VLSI; high-speed integrated circuits; integrated circuit design; integrated circuit technology; microwave power amplifiers; product development; radiofrequency integrated circuits; semiconductor materials; voltage-controlled oscillators; SiGe; SiGe BiCMOS flexibility; SiGe BiCMOS technology; effectiveness; high speed device design; integrated VCO; power amplifiers; product applications; technology directions; technology platform; very high level integration; BiCMOS integrated circuits; CMOS technology; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Power generation; Silicon germanium; Space technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049046

Filename

1049046