Title :
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
Author :
Yang, B. ; Ye, P.D. ; Kwo, J. ; Frei, M.R. ; Gossmann, H.-J.L. ; Mannaerts, J.P. ; Sergent, M. ; Hong, M. ; Ng, K.K. ; Bude, J.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
DC characteristics of a depletion-mode (D-mode) GaAs MOSFET with a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer (74 /spl Aring/) show low gate leakage current, negligible drain current hysteresis and higher than 10 V gale-drain two-terminal breakdown voltage. Compared to MESFET with the same gate length, channel material and fabricated by the same process, the GaAs MOSFET shows higher unity current gain cutoff frequency (Ft). The higher Ft for the MOSFET than that of the MESFET agrees with earlier theoretical predictions.
Keywords :
III-V semiconductors; MOSFET; UHF field effect transistors; dielectric thin films; gadolinium compounds; gallium arsenide; gallium compounds; leakage currents; microwave field effect transistors; semiconductor device breakdown; semiconductor-insulator boundaries; 10 V; 12.4 GHz; 37 GHz; 74 A; DC characteristics; Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)-GaAs; RF characteristics; depletion-mode GaAs MOSFET; drain current hysteresis; gale-drain two-terminal breakdown voltage; gate leakage current; thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer; unity current gain cutoff frequency; Dielectrics; Etching; Gallium arsenide; Gold; Leakage current; MESFETs; MOSFET circuits; Radio frequency; Schottky diodes; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049047
