Title :
A physics-based electro-thermal model for microwave and millimetre wave HEMTs
Author :
Johnson, R.G. ; Snowden, C.M. ; Pollard, R.D.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
An electro-thermal physical model is described for HEMT microwave and millimetre wave simulations which includes temperature effects due to self-heating within the device. Comparisons of the results from the model with measured data are made and it is found that good agreement is obtained without fitting of any of the parameters. The model is compatible with CAD requirements and is particularly suited to large-signal applications.
Keywords :
circuit CAD; high electron mobility transistors; microwave circuits; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; CAD requirements; large-signal applications; microwave HEMTs; millimetre wave HEMTs; physics-based electro-thermal model; self-heating; temperature effects; Application software; HEMTs; Intrusion detection; MESFETs; MODFETs; Microwave devices; Power generation; Predictive models; Temperature dependence; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596611
