Title :
Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth
Author :
Kawase, T. ; Hosaka, N. ; Hashio, K. ; Matsushima, M. ; Sakurada, T. ; Nakai, R.
Author_Institution :
Sumitomo Electr. Industries Ltd., Hyogo, Japan
Abstract :
Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI´s Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.
Keywords :
III-V semiconductors; crystal growth from melt; electrical resistivity; indium compounds; integrated circuit technology; photoluminescence; substrates; 4 inch; IC application; InP; InP substrate; etch-pit density distribution; macroscopic uniformity; micro-resistivity profiles; microscopic uniformity; photoluminescence; vertical boat growth; Application specific integrated circuits; Atmosphere; Boats; Crystals; Etching; Fluctuations; Indium phosphide; Microscopy; Photoluminescence; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049048
