Title :
40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications
Author :
Mouzannar, W. ; Jorge, F. ; Vuye, S. ; Dutisseuil, E. ; Lefevre, R.
Author_Institution :
Alcatel Res. & Innovation/OPTO+, Marcoussis, France
Abstract :
In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.
Keywords :
HEMT integrated circuits; III-V semiconductors; driver circuits; gallium arsenide; integrated circuit design; integrated circuit measurement; modulators; optical fibre communication; optical modulation; preamplifiers; 0.15 micron; 26 dB; 40 Gbit/s; 50 GHz; 50 ohm; 7.5 V; GaAs; GaAs pHEMT high voltage modulator drivers; LiNbO/sub 3/; LiNbO/sub 3/ modulators; cascode cells; double-distributed amplifier topology; driver amplifiers; driver small signal gain; high gain/HV modulator driver IC; load impedance; long haul optical fiber communications; modulator bandwidth/output voltage swing; preamplifiers; Bandwidth; Distributed amplifiers; Driver circuits; Frequency; Gallium arsenide; Optical amplifiers; Optical fiber communication; PHEMTs; Preamplifiers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049052
