Direct extraction of InGaP/GaAs HBT large signal model

Author

Raghavan, A. ; Banerjee, B. ; Venkataraman, S. ; Laskar, J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

225

Lastpage

228

Abstract

A direct extraction method for a compact InGaP/GaAs HBT CAD large signal model including self-heating effects is presented. The current source model including self-heating effect parameters is directly extracted from measured I-V data using a simple procedure. The distributed base resistance and distributed base-collector capacitance are directly extracted from measured S-parameters using a new technique. The extraction procedure for the model is simple, fast, accurate and inherently minimizes the average squared-error between measured and model data thereby requiring no further optimization after extraction.

Keywords

III-V semiconductors; S-parameters; circuit CAD; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor device models; CAD model; InGaP-GaAs; InGaP/GaAs HBT large signal model; S-parameters; average squared-error minimization; current source model; direct extraction method; distributed base resistance; distributed base-collector capacitance; measured I-V data extraction procedure; optimization; self heating effects; Capacitance measurement; Current measurement; Data mining; Electrical resistance measurement; Equations; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049065

Filename

1049065