DocumentCode
2477876
Title
Three-dimensional analysis of leakage currents in III-V HBTs
Author
Palankovski, V. ; Klima, R. ; Schultheis, R. ; Selberherr, S.
Author_Institution
Inst. fur Microelectron., Technische Univ. Wien, Austria
fYear
2002
fDate
20-23 Oct. 2002
Firstpage
229
Lastpage
232
Abstract
We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.
Keywords
III-V semiconductors; MMIC; circuit simulation; heterojunction bipolar transistors; integrated circuit modelling; leakage currents; microwave bipolar transistors; semiconductor device models; 3D simulation; III-V HBT; MMIC; development issues; device behavior; leakage current 3D analysis; modeling issues; real HBT structure; simulation issues; voltage range; Circuit simulation; Computational modeling; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Leakage current; Photonic band gap; Poisson equations; Signal analysis; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location
Monterey, California, USA
ISSN
1064-7775
Print_ISBN
0-7803-7447-9
Type
conf
DOI
10.1109/GAAS.2002.1049066
Filename
1049066
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