Title :
Simulations of quantum transport in HEMT using density gradient model
Author :
Lyumkis, E. ; Mickevicius, R. ; Penzin, O. ; Polsky, B. ; El Sayed, K. ; Wettstein, A. ; Fichtner, W.
Author_Institution :
Integrated Syst. Eng., Inc, San Jose, CA, USA
Abstract :
In this paper, quantum transport simulations for AlGaAs/InGaAs HEMT devices based on the density gradient model are presented. It is shows that size quantization effects have a pronounced influence on the electrical characteristics.
Keywords :
aluminium compounds; gallium arsenide; gradient methods; high electron mobility transistors; indium compounds; quantisation (quantum theory); quantum interference phenomena; semiconductor device models; size effect; AlGaAs-InGaAs; AlGaAs/InGaAs HEMT; HEMT; density gradient model; electrical characteristic; quantum transport simulations; size quantization; Doping; Electron mobility; HEMTs; Indium gallium arsenide; Modeling; Modems; Numerical simulation; Photonic band gap; Schrodinger equation; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049067
