Title :
Modeling of field dependent resistivity of BaTiO/sub 3/ positive temperature coefficient resistors
Author :
Wong, H. ; Han, P.G. ; Poon, M.C. ; Chen, Y.Y. ; Zheng, X.R.
Author_Institution :
Dept. of Electr. Eng., City Univ., Hong Kong
Abstract :
An abnormal field dependence of resistivity is observed in BaTiO 3 positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO 3 PTCRs.
Keywords :
barium compounds; electrical resistivity; grain boundaries; grain size; resistors; semiconductor materials; tunnelling; BaTiO/sub 3/; PTCR; current conduction; double Schottky barrier; electric field dependence; ferroelectric ceramic; grain boundary tunneling model; grain size; polycrystalline semiconductor; positive temperature coefficient resistor; resistivity; temperature dependence; Conductivity; Electric variables measurement; Ferroelectric materials; Grain boundaries; Grain size; Polarization; Resistors; Semiconductor materials; Temperature dependence; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740185
