Modeling of field dependent resistivity of BaTiO/sub 3/ positive temperature coefficient resistors

Author

Wong, H. ; Han, P.G. ; Poon, M.C. ; Chen, Y.Y. ; Zheng, X.R.

Author_Institution

Dept. of Electr. Eng., City Univ., Hong Kong

fYear

1998

fDate

29-29 Aug. 1998

Firstpage

45

Lastpage

48

Abstract

An abnormal field dependence of resistivity is observed in BaTiO₃ positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO₃ PTCRs.

Keywords

barium compounds; electrical resistivity; grain boundaries; grain size; resistors; semiconductor materials; tunnelling; BaTiO/sub 3/; PTCR; current conduction; double Schottky barrier; electric field dependence; ferroelectric ceramic; grain boundary tunneling model; grain size; polycrystalline semiconductor; positive temperature coefficient resistor; resistivity; temperature dependence; Conductivity; Electric variables measurement; Ferroelectric materials; Grain boundaries; Grain size; Polarization; Resistors; Semiconductor materials; Temperature dependence; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-4932-6

Type

conf

DOI

10.1109/HKEDM.1998.740185

Filename

740185