DocumentCode :
2477929
Title :
Modeling of low-frequency noise in barium titanate ceramic resistors
Author :
Wong, H. ; Han, P.G. ; Poon, M.C.
Author_Institution :
Dept. of Electr. Eng., City Univ., Hong Kong
fYear :
1998
fDate :
29-29 Aug. 1998
Firstpage :
49
Lastpage :
53
Abstract :
Low-frequency (LF) noise measurements, at room temperature and above the Curie point, were conducted in barium titanate ceramic resistors. Experiments show that the LF noise behaviors are governed by grain boundary tunneling at room temperature and by trapping and detrapping of the grain boundary states at temperatures above the Curie point and their physical models are developed, These observations provide additional information on the current conduction and the distribution of grain boundary states in these materials.
Keywords :
1/f noise; barium compounds; electron device noise; ferroelectric ceramics; grain boundaries; resistors; 1/f noise; 293 K; BaTiO/sub 3/; PTCR; boundary detrapping; boundary trapping; ceramic resistors; grain boundary tunneling; low-frequency noise; Barium; Ceramics; Grain boundaries; Low-frequency noise; Noise measurement; Resistors; Temperature distribution; Temperature measurement; Titanium compounds; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
Type :
conf
DOI :
10.1109/HKEDM.1998.740186
Filename :
740186
Link To Document :
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