Title :
Passive mode locking of monolithic semiconductor ring lasers
Author :
Hohimer, J.P. ; Vawter, G.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
In conclusion, we have demonstrated the first passively mode-locked GaAs-AlGaAs monolithic semiconductor ring lasers. These devices with a 150-μm-radius ring cavity emit a continuous train of transform-limited 1.3 ps lasing pulses at a frequency of 86 GHz. The output power of these devices is up to 10 mW/pulse at the laser output facet. In the future, we expect that this power level can be increased to 1100 mW/pulse by the addition of a waveguide amplifier
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser cavity resonators; laser mode locking; ring lasers; semiconductor lasers; 1.3 ps; 10 mW; 300 mum; GaAs-AlGaAs; continuous train; laser output facet; lasing pulses; monolithic semiconductor ring lasers; output power; passive mode locking; power level; ring cavity; transform-limited; waveguide amplifier; Frequency; Laser mode locking; Optical pulses; Power amplifiers; Power generation; Power lasers; Pulse amplifiers; Ring lasers; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379052
