DocumentCode :
2478056
Title :
Design of multi-finger AlGaAs/GaAs HBTs with non-uniform spacing
Author :
Chang, Yang-Hua ; Lee, Yueh-Cheng ; Liu, Chi-Chung
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Tou-Liu, Taiwan
fYear :
1998
fDate :
29-29 Aug. 1998
Firstpage :
78
Lastpage :
81
Abstract :
A non-uniform spacing structure in multi-finger heterojunction bipolar transistors is presented to improve thermal stability. Device peak temperature is lowered, and a higher current handling capability can be realized. The design procedures to optimize the spacing are described.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; thermal stability; AlGaAs-GaAs; design procedure; device peak temperature; high current handling capability; multi-finger AlGaAs/GaAs HBTs; multi-finger heterojunction bipolar transistors; nonuniform spacing; nonuniform spacing structure; spacing optimization; thermal stability; Design optimization; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Medical simulation; Resistors; Temperature distribution; Thermal conductivity; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
Type :
conf
DOI :
10.1109/HKEDM.1998.740192
Filename :
740192
Link To Document :
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