DocumentCode
2478061
Title
Diode pumped solid state mid-IR lasers for medical applications
Author
Esterowitz, L. ; Stoneman, R. ; Pinto, J. ; Rosenblatt, G.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
224
Abstract
The spectral region between 2 and 3 microns is of particular interest for medical applications because of the water absorption bands near 2 and 3 microns which lead to strong laser-tissue interactions. Recently we have tuned the tripositive thulium rare earth ion so that it can generate laser wavelengths over the spectral regions between 1.85 to 2.15 microns and between 2.20 to 2.37 microns continuously. Both laser systems, which operate CW, can be resonantly pumped with AlGaAs laser diodes operating at 785 nm. There has also been some interest in employing the 2 micron laser in a Q-switched mode. The thulium ion, however, has a low cross-section for the 2 micron transition so that efficient Q-switched operation has not been achieved in this ion. The traditional approach to the diode-pumped 2 micron laser has been to utilize crystals doped with both thulium and holmium ions. The thulium ion absorbs the pump radiation from AlGaAs diode lasers, while the laser transition takes place on the holmium transition at 2.1 microns which has a higher stimulated emission cross-section
Keywords
holmium; laser applications in medicine; laser transitions; laser tuning; optical pumping; solid lasers; thulium; 1.85 to 2.15 micron; 2.20 to 2.37 micron; 785 nm; AlGaAs; AlGaAs diode lasers; CW laser systems; Q-switched mode; diode pump; laser wavelengths; laser-tissue interactions; medical applications; pump radiation; solid state mid-IR lasers; spectral region; stimulated emission cross-section; water absorption bands; Biomedical equipment; Diodes; Laser applications; Laser excitation; Laser transitions; Laser tuning; Medical services; Pump lasers; Solid lasers; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379059
Filename
379059
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