High dynamic range InP HBT delta-sigma analog-to-digital converters

Author

Skones, W. ; Cheng, P. ; Ching, D. ; Inerfield, M. ; Nelson, S. ; Wong, C.

Author_Institution

TRW Space & Electron., Redondo Beach, CA, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

279

Lastpage

282

Abstract

This paper describes the development of analog-to-digital converters (ADCs) providing high dynamic range for multi carrier, multifunction communication applications. The ADCs are high order lowpass and bandpass delta-sigma modulators implemented in indium phosphide (InP) heterojunction bipolar (HBT) technology.

Keywords

III-V semiconductors; analogue-digital conversion; bipolar integrated circuits; cellular radio; delta-sigma modulation; heterojunction bipolar transistors; indium compounds; radio receivers; ADC; InP HBT delta-sigma analog-to-digital converters; bandpass delta-sigma modulators; cellular receivers; dynamic range; high order lowpass delta-sigma modulators; indium phosphide heterojunction bipolar technology; multi-carrier multifunction communication applications; Analog-digital conversion; Band pass filters; Bandwidth; Delta modulation; Dynamic range; Frequency; Heterojunction bipolar transistors; Indium phosphide; Resonator filters; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049077

Filename

1049077