15-Gbit/s high-speed monolithically integrated pin-HEMT photoreceiver

Author

Akatsu, Y. ; Miyamoto, Y. ; Akahori, Y. ; Ikeda, M.

Author_Institution

NTT Transmission Syst. Labs., Yokosuka, Japan

fYear

1993

fDate

15-18 Nov 1993

Firstpage

215

Lastpage

216

Abstract

In summary a high-speed monolithically integrated photoreceiver composed of a InGaAs pin PD and InAlAs-InGaAs HEMT´s (pin-HEMT) was constructed. Its sensitivity is -23.4 dBm in conjunction with an erbium-doped fiber pre-amplifier for a 15 Gbit/s NRZ lightwave signal. This is the first demonstration of the successful operation of a monolithically integrated photoreceiver at speeds beyond 10 Gbit/s

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; p-i-n photodiodes; sensitivity; 10 Gbit/s; 15 Gbit/s; InAlAs-InGaAs; InAlAs-InGaAs HEMT; InGaAs pin PD a; NRZ lightwave signal; erbium-doped fiber pre-amplifier; high-speed monolithically integrated pin-HEMT photoreceiver; monolithically integrated photoreceiver; sensitivity; Erbium-doped fiber amplifier; HEMTs; High speed optical techniques; MODFETs; Optical feedback; Optical modulation; Optical receivers; Optical sensors; Optical signal processing; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379063

Filename

379063