DocumentCode :
2478296
Title :
Negative binomial yield model parameter extraction using wafer probe bin map data
Author :
Langford, R.E. ; Liou, J.J.
Author_Institution :
Lucent Technol., Orlando, FL, USA
fYear :
1998
fDate :
29-29 Aug. 1998
Firstpage :
130
Lastpage :
133
Abstract :
This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing schemes in the analysis of wafer probe results. The results show that a large number of the wafers analyzed have cluster parameters greater than that typically reported in the literature.
Keywords :
integrated circuit yield; semiconductor process modelling; cluster parameter extraction; defect density; die windowing; negative binomial yield model; nonlinear equation; semiconductor manufacturing; wafer probe bin map; Circuits; Costs; Data mining; Electronics industry; History; Nonlinear equations; Parameter extraction; Probes; Productivity; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
Type :
conf
DOI :
10.1109/HKEDM.1998.740204
Filename :
740204
Link To Document :
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