DocumentCode
2478370
Title
Spreading-Resistance Temperature Sensor on SOI
Author
Lai, P.T. ; Li, Bin ; Chan, C.L.
Author_Institution
University of Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
148
Lastpage
151
Abstract
A Spreading-Resistance Temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) wafer and achieves characteristics comparable with similar SRT sensor on silicon wafer. This sensor structure can be potentially used in integrated sensors operating at temperatures up to 350 °C.
Keywords
electrical resistivity; elemental semiconductors; microsensors; silicon; silicon-on-insulator; temperature sensors; Conductivity; Costs; Dielectrics and electrical insulation; Manufacturing industries; Semiconductor films; Sensor phenomena and characterization; Silicon on insulator technology; Temperature measurement; Temperature sensors; Thermal sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740208
Filename
740208
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