Title :
High saturation intensity InGaAs/InP waveguide photodetector
Author :
Kellner, A.L. ; Wiliiams, A.R. ; Jiang, X.S. ; Yu, P.K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
In this paper, the fabrication, frequency response, and saturation characteristics of a waveguide pin photodiode made from double heterostructure InGaAs/InP materials are presented. The detector is designed for operation at optical wavelengths ranging from 1.3 to 1.5 μm. The materials are grown using a low pressure, organo-metallic vapor phase epitaxial reactor. Due to the use of a vent-run manifold and growth interruption at the heterointerface, high quality detector material is obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; optical saturation; optical waveguides; p-i-n photodiodes; photodetectors; semiconductor growth; vapour phase epitaxial growth; 1.3 to 1.5 micron; InGaAs-InP; InGaAs/InP waveguide photodetector; double heterostructure InGaAs/InP materials; fabrication; frequency response; growth interruption; low pressure organo-metallic vapor phase epitaxy; pin photodiode; saturation intensity; vent-run manifold; Frequency response; Indium gallium arsenide; Indium phosphide; Optical design; Optical device fabrication; Optical materials; Optical saturation; Optical waveguides; PIN photodiodes; Photodetectors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379078
