DocumentCode :
2479154
Title :
P3I-2 Cavityless Wafer Level Packaging of SAW Devices
Author :
Bhattacharjee, K. ; Shvetsov, A. ; Zhgoon, S.
Author_Institution :
RF Micro Devices, Greensboro
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
1886
Lastpage :
1889
Abstract :
Original implementations of the solution to cavityless WLP by means of isolation of waves are discussed. Variants of waveguiding layer acoustic wave (WLAW) (similar to boundary and interface waves) and isolated layer acoustic wave (ILAW) together with Bragg mirror-like additional acoustical isolation are compared in modeling and experimentally. The structures include metal electrode patterns and subsequent layers. The first among these layers is a dielectric layer, usually SiO2 (or Pyrex) that possesses temperature compensating properties, while the outer layers are formed with either metals or dielectrics. In order for the wave to be confined into the SiO2 layer the stack of the outer layers may be formed in different ways. For implementation of the WLAW concept, the main feature of subsequent layers is the increased acoustical velocity in comparison to the SiO2 layer. Thus the wave attenuates exponentially in the structure on both sides of the SiO2 waveguiding core. The ILAW concept is based on the application of high acoustical impedance materials providing abrupt change in boundary conditions between the layers. Further improvement of acoustical isolation in this approach is effectuated by means of alternating several layers with low and high acoustical impedance.
Keywords :
acoustic noise; noise abatement; silicon compounds; surface acoustic wave devices; surface acoustic waves; wafer level packaging; SAW devices; SiO2; acoustical impedance; acoustical isolation; cavityless wafer level packaging; isolated layer acoustic wave; metal electrode pattern; surface acoustic wave device; waveguiding layer acoustic wave; Acoustic materials; Acoustic propagation; Acoustic waves; Dielectric substrates; Optical surface waves; Surface acoustic wave devices; Surface acoustic waves; Surface impedance; Temperature; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
ISSN :
1051-0117
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2007.474
Filename :
4410047
Link To Document :
بازگشت