DocumentCode
2479154
Title
P3I-2 Cavityless Wafer Level Packaging of SAW Devices
Author
Bhattacharjee, K. ; Shvetsov, A. ; Zhgoon, S.
Author_Institution
RF Micro Devices, Greensboro
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
1886
Lastpage
1889
Abstract
Original implementations of the solution to cavityless WLP by means of isolation of waves are discussed. Variants of waveguiding layer acoustic wave (WLAW) (similar to boundary and interface waves) and isolated layer acoustic wave (ILAW) together with Bragg mirror-like additional acoustical isolation are compared in modeling and experimentally. The structures include metal electrode patterns and subsequent layers. The first among these layers is a dielectric layer, usually SiO2 (or Pyrex) that possesses temperature compensating properties, while the outer layers are formed with either metals or dielectrics. In order for the wave to be confined into the SiO2 layer the stack of the outer layers may be formed in different ways. For implementation of the WLAW concept, the main feature of subsequent layers is the increased acoustical velocity in comparison to the SiO2 layer. Thus the wave attenuates exponentially in the structure on both sides of the SiO2 waveguiding core. The ILAW concept is based on the application of high acoustical impedance materials providing abrupt change in boundary conditions between the layers. Further improvement of acoustical isolation in this approach is effectuated by means of alternating several layers with low and high acoustical impedance.
Keywords
acoustic noise; noise abatement; silicon compounds; surface acoustic wave devices; surface acoustic waves; wafer level packaging; SAW devices; SiO2; acoustical impedance; acoustical isolation; cavityless wafer level packaging; isolated layer acoustic wave; metal electrode pattern; surface acoustic wave device; waveguiding layer acoustic wave; Acoustic materials; Acoustic propagation; Acoustic waves; Dielectric substrates; Optical surface waves; Surface acoustic wave devices; Surface acoustic waves; Surface impedance; Temperature; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2007. IEEE
Conference_Location
New York, NY
ISSN
1051-0117
Print_ISBN
978-1-4244-1384-3
Electronic_ISBN
1051-0117
Type
conf
DOI
10.1109/ULTSYM.2007.474
Filename
4410047
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