Title :
A high power MOSFET computer model
Author :
Nienhaus, H.A. ; Bowers, J.C. ; Herren, P. C., Jr.
Author_Institution :
University of South Florida, Tampa, USA
Abstract :
This paper describes a non-linear computer model for high power MOS field effect transistors, along with techniques for determining the model parameters from a data sheet. A comparison of data sheet vs. computer simulated drain characteristics and transient response indicates excellent correlation.
Keywords :
Computational modeling; Computers; Integrated circuit modeling; MOSFET; Mathematical model; SPICE; Semiconductor device modeling;
Conference_Titel :
Power Electronics Specialists Conference, 1980. PESC. IEEE
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/PESC.1980.7089438
