Title :
A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities
Author :
Peyretaillade, T. ; Perez, M. ; Mons, S. ; Sommet, R. ; Auxemery, Ph. ; Lalaurie, J.C. ; Quere, R.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
In this paper, a new electrothermal non linear model of HBT suitable for CAD purposes is presented. This model is fully determined by pulsed measurement techniques and for the first time, it is shown that the prediction of thermal instabilities (collapse of current gain) is obtained from the CAD model. The model has been validated both by DC and RF load-pull measurements.
Keywords :
CAD; heterojunction bipolar transistors; semiconductor device models; thermal stability; CAD; DC load-pull; HBT; RF load-pull; current gain; electrothermal nonlinear model; pulsed measurement; thermal stability; Current measurement; Electrothermal effects; Heterojunction bipolar transistors; Predictive models; Pulse measurements; Radio frequency; Temperature; Thermal resistance; Thermal stability; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596619
