• DocumentCode
    2479373
  • Title

    “The effect of carrier lifetime profile on turn-off time and turn-off losses”

  • Author

    Temple, V.A.K. ; Holroyd, F.W. ; Adler, M.S. ; Gray, P.V.

  • Author_Institution
    General Electric, Corporate Research & Development, Schenectady, New York 12345, USA
  • fYear
    1980
  • fDate
    16-20 June 1980
  • Firstpage
    155
  • Lastpage
    163
  • Abstract
    The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim. Difference in thyristor turn-off and diode turn-off in an inductive circuit and when driven by a perfect voltage source are investigated. A portion of this investigation was reported at the 1979 PESC.
  • Keywords
    Anodes; Computers; Doping; Gold; Junctions; Switches; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1980. PESC. IEEE
  • Conference_Location
    Atlanta, Georgia, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1980.7089443
  • Filename
    7089443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2479373