DocumentCode
2479779
Title
InP/InGaAs HBT phototransistor as optoelectronic converter up to millimetre-wave bands
Author
Gonzalez, C. ; Palma, C. ; Thuret, J. ; Benchimol, J.L. ; Riet, M.
Author_Institution
France Telecom-CNET
fYear
1997
fDate
3-5 Sept. 1997
Firstpage
9
Lastpage
12
Keywords
Cutoff frequency; Epitaxial layers; Equivalent circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lighting; Optical films; Phototransistors; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 1997. MWP '97. International Topical Meeting on
Conference_Location
Duisburg, Germany
Print_ISBN
4-88552-187-4
Type
conf
DOI
10.1109/MWP.1997.740288
Filename
740288
Link To Document