DocumentCode :
2479779
Title :
InP/InGaAs HBT phototransistor as optoelectronic converter up to millimetre-wave bands
Author :
Gonzalez, C. ; Palma, C. ; Thuret, J. ; Benchimol, J.L. ; Riet, M.
Author_Institution :
France Telecom-CNET
fYear :
1997
fDate :
3-5 Sept. 1997
Firstpage :
9
Lastpage :
12
Keywords :
Cutoff frequency; Epitaxial layers; Equivalent circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lighting; Optical films; Phototransistors; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics, 1997. MWP '97. International Topical Meeting on
Conference_Location :
Duisburg, Germany
Print_ISBN :
4-88552-187-4
Type :
conf
DOI :
10.1109/MWP.1997.740288
Filename :
740288
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2479779
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