A CMOS THz staring imager with in-pixel electronics

Author

Domingues, Suzana ; Perenzoni, Matteo ; Stoppa, David ; Capobianco, Antonio D. ; Sacchetto, Francesco

Author_Institution

Center for Mater. & Microsyst., Fondazione Bruno Kessler (FBK), Trento, Italy

fYear

2011

fDate

3-7 July 2011

Firstpage

81

Lastpage

84

Abstract

A 16 × 16 staring imaging array was implemented in a 0.15-μm standard CMOS technology for terahertz detection in the range of 0.8 THz to 1.5 THz. Each pixel is composed of an antenna, a FET detector, and its readout electronics (a current integrator) so that the pixel signals of the whole matrix can be acquired simultaneously. The current integrator employs a 129-dB operational amplifier implementing two offset compensation techniques (chopping and current injection). In order to have a long integration time, the current integration is inserted in a sigma-delta loop. The implemented pixel has a pitch of 120 μm, and the chip total power consumption is below 30 mW.

Keywords

CMOS image sensors; matrix algebra; terahertz wave detectors; terahertz wave imaging; CMOS imager; THz staring imager; frequency 0.8 THz to 1.5 THz; imaging array; in-pixel electronics; matrix; operational amplifier; power consumption; sigma-delta loop; size 0.15 mum; terahertz detection; Antennas; CMOS integrated circuits; Detectors; FETs; Imaging; Pixel; CMOS; FET detector; plasma wave theory; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2011 7th Conference on

Conference_Location

Trento

Print_ISBN

978-1-4244-9138-4

Electronic_ISBN

978-1-4244-9136-0

Type

conf

DOI

10.1109/PRIME.2011.5966222

Filename

5966222