DocumentCode
2479984
Title
Theoretical modeling of the thermoelectric figure of merit in Si/Si 1-xGex quantum well structures
Author
Okuno, Hirotsugu ; Tominaka, T. ; Fujishima, S. ; Mitsumoto, T. ; Kubo, T. ; Kawaguchi, Tatsuki ; Kim, Jung-Wook ; Ikegami, Kenshin ; Sakamoto, Naohisa ; Yokouchi, S. ; Morikawa, T. ; Tanaka, T. ; Goto, Akira ; Yano, Yuichiro
Author_Institution
Dept. of Phys., MIT, Cambridge, MA
fYear
1998
fDate
24-28 May 1998
Firstpage
1075
Abstract
In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. Evidence for the enhancement of the thermoelectric figure of merit in quantum well structures has been shown experimentally in the PbTe system. A model based on solving the Boltzmann transport equation for both the electronic and phonon transport in the in-plane direction of the quantum well is presented for thermoelectric phenomena in Si/Si1-xGe x quantum well multilayers. The electronic transport is based on a detailed consideration of the band structure of Si and Si1-x Gex in the presence of quantum confinement, and the phonon transport is solved by assuming that the interfaces reflect and transmit phonons on a partially diffuse and partially specular basis. It is shown that significant enhancement of the thermoelectric figure of merit in quantum well structures can be achieved in such a system. The temperature dependent transport properties are also discussed
Keywords
Boltzmann equation; Ge-Si alloys; band structure; elemental semiconductors; interface phonons; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; silicon; thermoelectricity; Boltzmann transport equation; Si-SiGe; Si/Si1-xGex; Si/SiGe; band structure; electronic transport; interface phonons; model; multilayers; phonon transport; quantum confinement; quantum well; temperature dependence; thermoelectric figure of merit; Effective mass; Electrons; Magneto electrical resistivity imaging technique; Phonons; Physics; Quantum computing; Quantum mechanics; Temperature; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location
Nagoya
ISSN
1094-2734
Print_ISBN
0-7803-4907-5
Type
conf
DOI
10.1109/ICT.1998.740315
Filename
740315
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