• DocumentCode
    2480043
  • Title

    Thermoelectric properties and electronic structures for impurity-doped Bi2Te3

  • Author

    Sugihara, S. ; Suzuki, H. ; Kawashima, S. ; Fujita, M. ; Kajikawa, N. ; Shiraishi, K. ; Sekine, R.

  • Author_Institution
    Dept. of Mater. Sci. & Ceramic Technol., Shonan Inst. of Technol., Fujisawa, Japan
  • fYear
    1998
  • fDate
    24-28 May 1998
  • Firstpage
    59
  • Lastpage
    63
  • Abstract
    We studied the effects of Cu- and Cu2O doped into both n- and p-type Bi2Te3 for thermoelectric properties as well as X-ray photoelectron spectrum (XPS) evaluation followed by the calculated XPS, especially focused on the valence electrons. Cu-doping affected the Fermi level electronic structure of Bi2Te3 . Furthermore, the thermoelectric properties of electric resistivity, Seebeck coefficient and thermal conductivity were also affected by Cu doping, where the n-type Cu-doped Bi2Te3 indicated ZT; 0.7. There were not much different effects between Cu- and Cu2O-doping
  • Keywords
    Fermi level; Seebeck effect; X-ray photoelectron spectra; band structure; bismuth compounds; copper; copper compounds; electrical resistivity; impurity states; semiconductor materials; thermal conductivity; Bi2Te3:Cu; Bi2Te3:CuO2; Cu-doping; Cu2O-doping; Fermi level; Seebeck coefficient; X-ray photoelectron spectrum; XPS; electric resistivity; electronic structure; thermal conductivity; thermoelectric properties; valence electrons; Bismuth; Bonding; Copper; Electric resistance; Electrons; Impurities; Materials science and technology; Tellurium; Thermal conductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
  • Conference_Location
    Nagoya
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4907-5
  • Type

    conf

  • DOI
    10.1109/ICT.1998.740318
  • Filename
    740318