DocumentCode
2480043
Title
Thermoelectric properties and electronic structures for impurity-doped Bi2Te3
Author
Sugihara, S. ; Suzuki, H. ; Kawashima, S. ; Fujita, M. ; Kajikawa, N. ; Shiraishi, K. ; Sekine, R.
Author_Institution
Dept. of Mater. Sci. & Ceramic Technol., Shonan Inst. of Technol., Fujisawa, Japan
fYear
1998
fDate
24-28 May 1998
Firstpage
59
Lastpage
63
Abstract
We studied the effects of Cu- and Cu2O doped into both n- and p-type Bi2Te3 for thermoelectric properties as well as X-ray photoelectron spectrum (XPS) evaluation followed by the calculated XPS, especially focused on the valence electrons. Cu-doping affected the Fermi level electronic structure of Bi2Te3 . Furthermore, the thermoelectric properties of electric resistivity, Seebeck coefficient and thermal conductivity were also affected by Cu doping, where the n-type Cu-doped Bi2Te3 indicated ZT; 0.7. There were not much different effects between Cu- and Cu2O-doping
Keywords
Fermi level; Seebeck effect; X-ray photoelectron spectra; band structure; bismuth compounds; copper; copper compounds; electrical resistivity; impurity states; semiconductor materials; thermal conductivity; Bi2Te3:Cu; Bi2Te3:CuO2; Cu-doping; Cu2O-doping; Fermi level; Seebeck coefficient; X-ray photoelectron spectrum; XPS; electric resistivity; electronic structure; thermal conductivity; thermoelectric properties; valence electrons; Bismuth; Bonding; Copper; Electric resistance; Electrons; Impurities; Materials science and technology; Tellurium; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location
Nagoya
ISSN
1094-2734
Print_ISBN
0-7803-4907-5
Type
conf
DOI
10.1109/ICT.1998.740318
Filename
740318
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