Title :
Schottky diodes on Si1-xGex, Si1-x-y GexCy and Si1-yCy alloys
Author :
Aubry-Fortuna, V. ; Mamor, M. ; Meyer, F. ; Bodnar, S. ; Regolini, J.L.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
29 Apr-3 May 1996
Abstract :
In previous studies, we have investigated the Schottky barrier height of tungsten (W) on p-type and n-type Si1-xGex /Si as a function of Ge-content (0⩽x⩽33%) and Si1-x Gex thickness for a given composition. The barrier height to n-type does not vary significantly while that to p-type follows the same trends as the band-gap: it decreases with x and the strain. In this study, we have extended our measurements to the ternary alloy Si1-x-yGexCy and to the binary alloy Si1-yCy. The behavior of the barrier height W/Si1-x-yGexCy is similar to that of W/Si1-xGex: for p-type, it increases with the strain relaxation induced by the incorporation of C while it remains constant for n-type. On the other hand, results on W/Si1-yC y are quite different, suggesting a change in the Fermi level pinning position
Keywords :
Fermi level; Ge-Si alloys; Schottky barriers; conduction bands; semiconductor-metal boundaries; silicon compounds; stress relaxation; tungsten; FTIR spectra; Fermi level pinning; Schottky barrier height; Schottky diodes; W-SiC; W-SiGe; W-SiGeC; conduction bands; doping levels; strain relaxation; Capacitive sensors; Germanium alloys; Photonic band gap; Schottky barriers; Schottky diodes; Semiconductor films; Silicon alloys; Silicon carbide; Substrates; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571083
