Title :
Optoelectronic device reliability
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
A great deal of progress has been achieved in the last two decades on the reliability of AlGaAs/GaAs and InGaAsP/InP optoelectronic devices. The progress has led to a wide variation of applications for optoelectronic devices. The application fields prevail from fiber transmission systems to consumer electronics. Now, the functions and applications of optoelectronic devices, in the research and development stage, are changing to such things as monolithically integrated devices and pumping sources of fiber amplifiers. In these situations, new reliability problems have begun to appear, although most physical mechanisms are essentially the same as those clarified in the AlGaAs/GaAs and InGaAsP/InP optoelectronic devices. In this paper, the new reliability problems will be discussed based on the degradation mechanisms and reliability of those optoelectronic devices. The key words in these new reliability problems are strain, high power, and integration
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; optical pumping; optoelectronic devices; reliability; semiconductor device reliability; AlGaAs; AlGaAs/GaAs optoelectronic devices; GaAs; InGaAsP; InGaAsP/lnP optoelectronic devices; InP; consumer electronics; degradation mechanisms; fiber amplifiers; fiber transmission systems; high power; integration; monolithically integrated devices; optoelectronic device reliability; pumping sources; reliability problems; strain; Degradation; Fiber lasers; Gallium arsenide; Laser stability; Optical fiber devices; Optoelectronic devices; Power lasers; Pump lasers; Semiconductor lasers; Solid lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379146