Raman scattering analysis of SiGe annealed and implanted layers

Author

Valakh, M.Ya. ; Klyui, N.I. ; Perez-Rodriguez, Alejandro ; Calvo-Barrio, L. ; Serre, Catherine ; Morante, J.R. ; Dietrich, Benedikt

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

241

Lastpage

244

Abstract

The effect of thermal annealing and C⁺ implantation on the Raman spectra of Si_1-xGe_x (x=0.22, 0.29) strained layers grown on Si is investigated. For the annealed samples, relaxation is only observed after annealing at temperatures higher than 800°C. However, full relaxation is not achieved even after annealing at 1050°C. Samples annealed at this temperature show a residual stress in the range of 8 Kbars. For the implanted samples (with C peak concentration close to 2%), there is not a substantial shift of the Si-Si mode, in spite of the significant stress compensation in the layers. The strong lattice microdistortion near the C atoms is likely the main reason of this effect

Keywords

Ge-Si alloys; Raman spectra; annealing; carbon; ion implantation; semiconductor materials; 8 kbar; 800 to 1050 C; Raman spectra; SiGe:C; implantation; lattice microdistortion; residual stress; stress compensation; thermal annealing; Annealing; Bonding; Capacitive sensors; Germanium silicon alloys; Lattices; Raman scattering; Residual stresses; Silicon germanium; Strain measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571086

Filename

571086