Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition

Author

Cockerill, T.M. ; Forbes, D.V. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

16

Lastpage

17

Abstract

In this talk, we present the fabrication process and laser results for narrow stripe, index-guided strained layer lasers with low threshold currents and good spectral characteristics. Threshold currents as low as 11 mA for uncoated devices and single longitudinal mode operation are obtained for the three step growth buried heterostructure laser, indicating high quality device performance for devices fabricated with an AlGaAs regrowth step

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; epitaxial growth; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; 11 mA; AlGaAs regrowth step; InGaAs-GaAs-AlGaAs; fabrication process; good spectral characteristics; high quality device performance; laser results; low threshold currents; narrow stripe index-guided strained layer lasers; single longitudinal mode operation; strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers; three step growth buried heterostructure laser; three-step selective-area metalorganic chemical vapor deposition; uncoated devices; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Geometrical optics; Inductors; Laboratories; Laser modes; MOCVD; Optical device fabrication; Optical materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379149

Filename

379149