Title :
Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge-Ge1-x Six heterostructures
Author :
Arapov, Yu. ; Yakunin, M. ; Orlov, L. ; Rubtsova, R. ; Yov, L. Vorob ; Donetsky, D.
Author_Institution :
Inst. for Phys. of Metals, Ekaterinburg, Russia
fDate :
29 Apr-3 May 1996
Abstract :
The spectral characteristics of 2D holes near the Brillouin band centre and the heating conditions of charge carriers in Ge layers of a Ge-Ge1-xSix multiquantum well heterostructure were studied by the electrophysical method in strong magnetic and electric fields
Keywords :
Ge-Si alloys; Hall mobility; elemental semiconductors; germanium; hot carriers; semiconductor materials; semiconductor quantum wells; two-dimensional electron gas; 2D holes; Brillouin band centre; Ge-Ge1-xSix; Ge-GeSi; charge carrier heating; electric fields; electrophysical method; multiquantum well heterostructure; spectral characteristics; strong magnetic fields; Brillouin scattering; Charge carriers; Cyclotrons; Hall effect; Magnetic field induced strain; Magnetic fields; Periodic structures; Physics; Quantum well devices; Resonance light scattering;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571088
