DocumentCode :
2480212
Title :
Novel regrowth technique for semi-insulating buried crescent lasers
Author :
Jiang, Ching-Long ; Miller, Robert ; Ferreira, Maria ; Wilder, Keith ; Kulick, John ; Wilson, Randy
Author_Institution :
Lytel Div., AMP Inc., Somerville, NJ, USA
fYear :
1993
fDate :
15-18 Nov 1993
Firstpage :
14
Lastpage :
15
Abstract :
Although the problem of zinc (Zn) diffusion from p-type indium phosphide (InP) into iron (Fe) doped InP layers has been reported by several groups, only limited information has been published on minimization of zinc diffusion and the associated improvement of device performance
Keywords :
diffusion; optical fabrication; semiconductor growth; semiconductor lasers; Fe doped InP layers; InP; InP:Fe; Zn; Zn diffusion; device performance; p-type indium phosphide; regrowth technique; semi-insulating buried crescent lasers; zinc diffusion minimisation; Doping; Electron beams; Indium phosphide; Insulation; Iron; Leakage current; Power generation; Semiconductor lasers; Threshold current; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
Type :
conf
DOI :
10.1109/LEOS.1993.379150
Filename :
379150
Link To Document :
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