Title :
Surface modification of SiC thin films by pulsed electron and ion beams
Author :
Korenev, S.A. ; Huran, J. ; Kobzev, A.P.
Author_Institution :
JINR, Dubna, Russia
fDate :
29 Apr-3 May 1996
Abstract :
The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy
Keywords :
Rutherford backscattering; amorphous semiconductors; electron beam effects; infrared spectra; ion beam effects; semiconductor thin films; silicon compounds; surface topography; 1 to 20 A; 100 to 300 A; 200 to 400 keV; 300 ns; IR measurements; RBS; SiC; SiC thin films; elastic recoil detection; electron beam current; pulse duration; pulsed electron beams; pulsed ion beams; surface modification; Electron beams; Frequency; Ion beams; Production; Pulse generation; Semiconductor films; Silicon carbide; Temperature; Transistors; Voltage;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571092
