DocumentCode :
2480293
Title :
Evidence of stress dependence in the diffusion of point defects in GaAs/GaAlAs heterostructures
Author :
Pépin, A. ; Vieu, C. ; Schneider, M. ; Launois, H.
Author_Institution :
Lab. de Microstructures et de Microelectron., CNRS, Bagneux, France
fYear :
1996
fDate :
29 Apr-3 May 1996
Firstpage :
263
Lastpage :
266
Abstract :
We present experimental results on the selective interdiffusion of GaAs/GaAlAs quantum well heterostructures induced by SiO2 and Si3N4 capping and annealing. Comparative studies show that interdiffusion occurs under SiO2 in the case of patterned Si3N4 strips coated with SiO2, while interdiffused areas surprisingly appear below Si 3N4 in the reversed case where patterned SiO2 strips are coated with Si3N4. Our work demonstrates that the diffusion of the excess gallium vacancies, which are responsible for the enhanced interdiffusion, is driven by the stress field generated by the dielectric patterned layers
Keywords :
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; diffusion; gallium arsenide; semiconductor quantum wells; semiconductor-insulator boundaries; stress effects; surface diffusion; vacancies (crystal); GaAs-GaAlAs; GaAs/GaAlAs heterostructures; Si3N4; Si3N4 capping; SiO2; SiO2 capping; SiO2 patterned strips; annealing; dielectric patterned layers; interdiffusion; point defect diffusion; quantum well; stress dependence; vacancies; Annealing; Compressive stress; Dielectric thin films; Etching; Gallium arsenide; Microstructure; Molecular beam epitaxial growth; Nanostructures; Strips; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
Type :
conf
DOI :
10.1109/SIM.1996.571094
Filename :
571094
Link To Document :
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