DocumentCode
2480319
Title
Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs
Author
Kuisma, S. ; Saarinen, K. ; Hautojärvi, P. ; Corbel, C.
Author_Institution
Lab. of Phys., Helsinki Univ. of Technol., Espoo, Finland
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
267
Lastpage
270
Abstract
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs
Keywords
III-V semiconductors; deep levels; defect absorption spectra; electron beam effects; gallium arsenide; infrared spectra; metastable states; vacancies (crystal); EL2 defect; GaAs; IR absorption; antisite defects; electron-irradiation; metastable state; positron irradiation-induced vacancy; Annealing; Electromagnetic wave absorption; Electrons; Gallium arsenide; Infrared detectors; Lighting; Metastasis; Performance evaluation; Positrons; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.571095
Filename
571095
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