Title :
Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure
Author :
Gutkin, A.A. ; Reshchikov, M.A. ; Sedov, V.E. ; Sosnovskii, V.R.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
29 Apr-3 May 1996
Abstract :
We have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the VGaTeAs, VGa SnGa and VGaSiGa complexes responsible for the 1.2 eV PL band and the CuGaTeAs, CuGaSAs and CuGaSeAs complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature
Keywords :
III-V semiconductors; gallium arsenide; impurity-vacancy interactions; photoluminescence; silicon; tellurium; tin; 1.3 eV; CuGaSAs complexes; CuGaSeAs complexes; CuGaTeAs complexes; GaAs:Si; GaAs:Sn; GaAs:Te; VGaSiGa complexes; VGaSnGa complexes; VGaTeAs complexes; distortion; integrated polarization; n-GaAs:Te(Sn)(Si); photoluminescence; structure; uniaxial pressure; Crystals; Electron optics; Gallium arsenide; Integrated optics; Optical distortion; Optical polarization; Photoluminescence; Stress; Temperature; Vectors;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571096
