Title :
Low-dislocation-density and low-residual-strain semi-insulating GaAs grown by vertical boat method
Author :
Kawase, T. ; Hagi, Y. ; Tatsumi, M. ; Fujita, K. ; Nakai, R.
Author_Institution :
Itami Res. Labs., Sumitomo Electr. Ind. Ltd., Itami, Japan
fDate :
29 Apr-3 May 1996
Abstract :
Semi-insulating 4" φ GaAs single crystals of 20 cm in length have been grown by the Vertical Boat(VB) method. The crystals have extremely low dislocation density between 1000 and 2000 cm-2, and have extremely low residual strain between 2×10-6 and 3×10-6. Good controllability of the carbon concentration and the resistivity have been achieved by doping carbon from a carbon source. The crystals have uniform distribution of carbon along the growth axis. The concave shape of the solid-liquid interface was improved by applying computer simulation and lineage formation was suppressed
Keywords :
III-V semiconductors; carbon; crystal growth from melt; dislocation density; dislocation etching; doping profiles; electrical resistivity; gallium arsenide; internal stresses; semiconductor doping; semiconductor growth; 20 cm; C concentration; GaAs; GaAs:C; computer simulation; dislocation density; lineage formation; residual strain; resistivity; solid-liquid interface concave shape; vertical boat method; Boats; Capacitive sensors; Computer simulation; Conductivity; Crystals; Doping; Gallium arsenide; Shape; Shipbuilding industry; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571098
