Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth

Author

Hagi, Y. ; Kawarabayashi, S. ; Inoue, T. ; Nakai, R. ; Kohno, J. ; Kawase, T. ; Tatsumi, M.

Author_Institution

Semicond. Div., Sumitomo Electr. Ind. Ltd., Itami, Japan

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

279

Lastpage

282

Abstract

3-inch Si doped GaAs crystals with low dislocation density (⩽100 cm^-2) were developed by the Vertical Boat (VB) method. The shape of the solid/liquid interface was controlled by the temperature gradient near the interface. The desirable interface shape for low dislocation density was studied both empirically and through computer simulation. By improving the interface shape, the stable production of crystals with low dislocation density were achieved

Keywords

Hall effect; III-V semiconductors; crystal growth from melt; dislocation density; dislocation etching; gallium arsenide; photoluminescence; semiconductor growth; silicon; GaAs:Si; Hall measurement; computer simulation; dislocation density; empirical method; interface shape; photoluminescence; solid/liquid interface; temperature gradient; vertical boat growth; Atomic measurements; Boats; Crystals; Furnaces; Gallium arsenide; Shape control; Shape measurement; Solid modeling; Temperature control; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571099

Filename

571099