Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface

Author

Krispin, P. ; Hey, R. ; Kostial, H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

287

Lastpage

290

Abstract

Under standard MBE growth conditions, a series of electron traps is concentrated near the inverted. GaAs/AlAs interface (GaAs grown on top of AlAs). These levels have been identified as being due to native point defects on the AlAs side of the heterointerface. The particular influence of As₄ flux, growth temperature, and growth rate is examined with respect to the intrinsic levels at the inverted GaAs/AlAs interface. It is shown that the structural and compositional perfection of the inverted interface is strongly affected by excess arsenic during growth. Moreover, it is found that the accumulation of the dominant, arsenic vacancy-related defect on the AlAs side of the inverted interface is neither influenced by the As₄ flux, nor by the growth rate

Keywords

III-V semiconductors; aluminium compounds; deep levels; electron traps; gallium arsenide; interface structure; molecular beam epitaxial growth; semiconductor growth; semiconductor junctions; stoichiometry; vacancies (crystal); As₄ flux; GaAs-AlAs; GaAs/AlAs inverted interface; MBE growth; compositional perfection; deep electronic states; electron traps; growth rate; growth temperature; native point defects; structural perfection; vacancy-related defect; Capacitance; Electric potential; Electron traps; Gallium arsenide; Heterojunctions; Particle scattering; Spectroscopy; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571101

Filename

571101