Title :
Exploring ageing effects on integrated power devices (I–V) for health monitoring
Author :
Marcault, E. ; Breil, M. ; Bourennane, A. ; Tounsi, P. ; Dupuy, P.
Author_Institution :
LAAS, CNRS, Toulouse, France
Abstract :
Based on 3D FEM electro thermo mechanical simulations (COMSOL) and 2D multi-cells simulation (Sentaurus TCAD), we explore the impact of main ageing phenomena (bonding wire lift off and solder joint delamination) at the origin of power assembly failures, on the electrical characteristics of MOS gated power devices (IGBT, VDMOS). Electrical characteristics variations are analyzed with a view to using them for health monitoring of embedded power assemblies.
Keywords :
MOS integrated circuits; ageing; delamination; electromechanical effects; failure analysis; finite element analysis; insulated gate bipolar transistors; integrated circuit metallisation; integrated circuit modelling; power MOSFET; power bipolar transistors; power integrated circuits; semiconductor device metallisation; semiconductor device models; solders; technology CAD (electronics); 2D multicell simulation; 3D FEM electrothermomechanical simulations; COMSOL; IGBT; MOS gated power devices; Sentaurus TCAD; VDMOS; ageing effect; bonding wire lift off; electrical characteristics; embedded power assembly; health monitoring; integrated power devices; metallization ageing; power assembly failure; solder joint delamination; Aging; Insulated gate bipolar transistors; Metallization; Soldering; Stress; Thermal stresses; 2D physical simulations; 3D FEM electro thermo mechanical simulations; IGBT; VDMOS; health monitoring; power assemblies;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2011 7th Conference on
Conference_Location :
Trento
Print_ISBN :
978-1-4244-9138-4
Electronic_ISBN :
978-1-4244-9136-0
DOI :
10.1109/PRIME.2011.5966249
