Development of thermoelectric semiconductor materials

We present the technology of producing n- and p-type compound semiconductor materials on basis of BiTe for manufacturing high efficiency thermoelectric cooling modules. The technology included the processes of initial materials purification, synthesis of polycrystals and zone melting homogenization. The developed technology allows to produce BiTe ingots with the oriented polycrystal structure and the following characteristics: diameter=16 mm, length=500 mm, thermoelectric coefficient=220-230 μV/degree and electric conductivity=1000-1200 (Ohm.cm)^-1. The standard samples of thermoelectric material had got the thermoelectric efficiency coefficient Z≈2.75·10 ^-3(degree)^-1