DocumentCode
2480496
Title
Experimental comparison of "load-pull" measurement systems for nonlinear power transistor characterization
Author
Berghof, G. ; Deshours, F. ; Bergeault, E. ; Villotte, J.P. ; Villeforceix, B.
Author_Institution
Dept. COM, ENST, Paris, France
fYear
1996
fDate
17-21 June 1996
Firstpage
540
Lastpage
541
Abstract
Load-pull measurements are essential to characterise power devices accurately. This paper presents a comparison between two active and one passive load-pull measurement system. The experimental results obtained with a power MESFET transistor (1 Watt) are compared in terms of output power level and power added efficiency for various load impedances and input power levels.
Keywords
microwave measurement; power MESFET; semiconductor device testing; 1 W; load impedance; load-pull measurement; microwave measurement; nonlinear power transistor; power MESFET transistor; power performance; Gain measurement; Impedance measurement; MESFETs; Microwave transistors; Power generation; Power measurement; Power transistors; RF signals; Radio frequency; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location
Braunschweig, Germany
Print_ISBN
0-7803-3376-4
Type
conf
DOI
10.1109/CPEM.1996.547338
Filename
547338
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