Title :
Experimental comparison of "load-pull" measurement systems for nonlinear power transistor characterization
Author :
Berghof, G. ; Deshours, F. ; Bergeault, E. ; Villotte, J.P. ; Villeforceix, B.
Author_Institution :
Dept. COM, ENST, Paris, France
Abstract :
Load-pull measurements are essential to characterise power devices accurately. This paper presents a comparison between two active and one passive load-pull measurement system. The experimental results obtained with a power MESFET transistor (1 Watt) are compared in terms of output power level and power added efficiency for various load impedances and input power levels.
Keywords :
microwave measurement; power MESFET; semiconductor device testing; 1 W; load impedance; load-pull measurement; microwave measurement; nonlinear power transistor; power MESFET transistor; power performance; Gain measurement; Impedance measurement; MESFETs; Microwave transistors; Power generation; Power measurement; Power transistors; RF signals; Radio frequency; Tuners;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547338
