Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons

Author

Calhoun, Kenneth H. ; Jokerst, N.M.

Author_Institution

Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

339

Lastpage

340

Abstract

We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors

Keywords

Fabry-Perot interferometers; III-V semiconductors; electro-optical effects; electroabsorption; gallium arsenide; metal-semiconductor-metal structures; p-n heterojunctions; refractive index; semiconductor epitaxial layers; semiconductor thin films; Franz-Keldysh electrorefraction; GaAs; MSM structures; P-i-N double heterostructures; absorption edge; electrical contacts; epitaxial liftoff processing; epitaxial liftoff thin film semiconductor etalons; mirrors; near-band edge; thin metallic films; Absorption; Contacts; Electric variables measurement; Fabry-Perot; Gallium arsenide; Mirrors; Optical films; PIN photodiodes; Photonic band gap; Semiconductor thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379198

Filename

379198