Thermoelectric properties of p-type Bi-Sb-Te crystals with a composite structure

Author

Ebisumori, K. ; Tauchi, H. ; Shinohara, Y. ; Nishida, I.A.

Author_Institution

Aisin Seiki Co. Ltd., Aichi, Japan

fYear

1998

fDate

24-28 May 1998

Firstpage

155

Lastpage

158

Abstract

The p-type Bi-Sb-Te compounds are most useful for electric cooling devices at room temperature. When Bi-Sb-Te system is Te-rich, lamellar precipitates can be formed according to the Sb-Te phase diagram. How the precipitates affect the thermoelectric properties of Bi-Sb-Te crystals has been investigated in this paper. The Bi-Sb-Te crystals containing some precipitates were obtained from the Te-rich Bi-Sb-Te boules grown by Bridgeman method. The thermoelectric properties of the crystals were changed with the composition and the crystal growth rate. When the composition was (Bi_0.21Sb_0.79)₂Te_3.15 and also the growth rate was 7.2 mm/h, the figure of merit was highest. The precipitates consisted of Te and Bi-Sb-Te lamellas

Keywords

antimony compounds; bismuth compounds; crystal growth from melt; precipitation; semiconductor growth; semiconductor materials; stoichiometry; thermoelectricity; (Bi_0.21Sb_0.79)₂Te_3.15; 20 C; Bridgeman method; Sb-Te phase diagram; Te-rich; Te-rich Bi-Sb-Te boules; composite structure; composition; crystal growth rate; electric cooling; figure of merit; lamellar precipitates; p-type Bi-Sb-Te crystals; precipitates; room temperature; thermoelectric properties; Argon; Cooling; Crystalline materials; Crystals; Fabrication; Grain boundaries; Tellurium; Temperature; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on

Conference_Location

Nagoya

ISSN

1094-2734

Print_ISBN

0-7803-4907-5

Type

conf

DOI

10.1109/ICT.1998.740341

Filename

740341