Title :
Thermoelectric properties of p-type Bi-Sb-Te crystals with a composite structure
Author :
Ebisumori, K. ; Tauchi, H. ; Shinohara, Y. ; Nishida, I.A.
Author_Institution :
Aisin Seiki Co. Ltd., Aichi, Japan
Abstract :
The p-type Bi-Sb-Te compounds are most useful for electric cooling devices at room temperature. When Bi-Sb-Te system is Te-rich, lamellar precipitates can be formed according to the Sb-Te phase diagram. How the precipitates affect the thermoelectric properties of Bi-Sb-Te crystals has been investigated in this paper. The Bi-Sb-Te crystals containing some precipitates were obtained from the Te-rich Bi-Sb-Te boules grown by Bridgeman method. The thermoelectric properties of the crystals were changed with the composition and the crystal growth rate. When the composition was (Bi0.21Sb0.79)2Te3.15 and also the growth rate was 7.2 mm/h, the figure of merit was highest. The precipitates consisted of Te and Bi-Sb-Te lamellas
Keywords :
antimony compounds; bismuth compounds; crystal growth from melt; precipitation; semiconductor growth; semiconductor materials; stoichiometry; thermoelectricity; (Bi0.21Sb0.79)2Te3.15; 20 C; Bridgeman method; Sb-Te phase diagram; Te-rich; Te-rich Bi-Sb-Te boules; composite structure; composition; crystal growth rate; electric cooling; figure of merit; lamellar precipitates; p-type Bi-Sb-Te crystals; precipitates; room temperature; thermoelectric properties; Argon; Cooling; Crystalline materials; Crystals; Fabrication; Grain boundaries; Tellurium; Temperature; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740341
